Технічний опис IRS21281PBF Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-PDIP, Rise / Fall Time (Typ): 80ns, 40ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, DigiKey Programmable: Not Verified.
Інші пропозиції IRS21281PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IRS21281PBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товар відсутній |
|
![]() |
IRS21281PBF | Виробник : Infineon / IR |
![]() |
товар відсутній |