Технічний опис IRS2008MPBFAUMA1 Infineon Technologies
Description: LEVEL SHIFT JUNCTION ISO, Packaging: Tape & Reel (TR), Package / Case: 14-VFQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: CMOS, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 14-MLPQ (4x4), Rise / Fall Time (Typ): 70ns, 30ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2008MPBFAUMA1
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IRS2008MPBFAUMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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IRS2008MPBFAUMA1 | Виробник : Infineon Technologies |
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товар відсутній |