IRLU8203PBF

IRLU8203PBF Infineon Technologies


irlr8203pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 110A 3-Pin(3+Tab) IPAK
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IRLU8203PBF Infineon Technologies

Description: MOSFET N-CH 30V 110A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V.

Інші пропозиції IRLU8203PBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRLU8203PBF IRLU8203PBF Виробник : Infineon Technologies IRL%28R%2CU%298203PbF.pdf Description: MOSFET N-CH 30V 110A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
товар відсутній