IRLR2705PBF

IRLR2705PBF Infineon Technologies


infineon-irlr2705-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 55V 28A 3-Pin(2+Tab) DPAK Tube
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Технічний опис IRLR2705PBF Infineon Technologies

Description: MOSFET N-CH 55V 28A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V.

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IRLR2705PBF IRLR2705PBF Виробник : Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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IRLR2705PBF IRLR2705PBF Виробник : Infineon Technologies Infineon_IRLR2705_DataSheet_v01_01_EN-1228547.pdf MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC
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