IRLML2803TRPBF-1 Infineon Technologies


IRLML2803PbF-1_10-28-14.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
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Технічний опис IRLML2803TRPBF-1 Infineon Technologies

Description: MOSFET N-CH 30V 1.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V, Power Dissipation (Max): 540mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro3™/SOT-23, Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V.

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IRLML2803TRPBF-1 IRLML2803TRPBF-1 Виробник : Infineon Technologies IRLML2803PbF-1_10-28-14.pdf Infineon
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