Технічний опис IRLIB4343
Description: MOSFET N-CH 55V 19A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V.
Інші пропозиції IRLIB4343
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRLIB4343 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 19A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V |
товар відсутній |