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IRLI530GPBF Vishay Siliconix
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Description: MOSFET N-CH 100V 9.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 145.5 грн |
10+ | 125.81 грн |
100+ | 101.15 грн |
500+ | 77.99 грн |
1000+ | 64.62 грн |
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Технічний опис IRLI530GPBF Vishay Siliconix
Description: MOSFET N-CH 100V 9.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V.
Інші пропозиції IRLI530GPBF
Фото | Назва | Виробник | Інформація |
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IRLI530GPBF | Виробник : Vishay |
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товар відсутній |
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IRLI530GPBF | Виробник : Vishay |
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товар відсутній |
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IRLI530GPBF | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; Idm: 39A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Pulsed drain current: 39A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRLI530GPBF | Виробник : Vishay Semiconductors |
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товар відсутній |
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IRLI530GPBF | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; Idm: 39A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Pulsed drain current: 39A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |