IRLH5036TR2PBF

IRLH5036TR2PBF Infineon Technologies


infineon-irlh5036-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 20A 8-Pin PQFN EP T/R
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Технічний опис IRLH5036TR2PBF Infineon Technologies

Description: MOSFET N-CH 60V 100A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V.

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IRLH5036TR2PBF IRLH5036TR2PBF Виробник : Infineon Technologies irlh5036pbf.pdf?fileId=5546d462533600a4015356637102259d Description: MOSFET N-CH 60V 100A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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