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IRGS8B60KTRLPBF

IRGS8B60KTRLPBF Infineon Technologies

IRG%28B%2CS%2CSL%298B60KPbF.pdf Виробник: Infineon Technologies
Description: IGBT 600V 28A 167W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
на замовлення 789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
347+61.29 грн
Мінімальне замовлення: 347
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Технічний опис IRGS8B60KTRLPBF Infineon Technologies

Description: IGBT 600V 28A 167W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A, Supplier Device Package: D2PAK, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 160µJ (on), 160µJ (off), Test Condition: 400V, 8A, 50Ohm, 15V, Gate Charge: 29 nC, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 34 A, Power - Max: 167 W.

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IRGS8B60KTRLPBF IRGS8B60KTRLPBF Виробник : Infineon Technologies irgs8b60kpbf.pdf Trans IGBT Chip N-CH 600V 28A 167mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IRGS8B60KTRLPBF IRGS8B60KTRLPBF Виробник : Infineon Technologies IRG%28B%2CS%2CSL%298B60KPbF.pdf Description: IGBT 600V 28A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
товар відсутній
IRGS8B60KTRLPBF IRGS8B60KTRLPBF Виробник : Infineon Technologies IRG%28B%2CS%2CSL%298B60KPbF.pdf Description: IGBT 600V 28A 167W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
товар відсутній
IRGS8B60KTRLPBF IRGS8B60KTRLPBF Виробник : Infineon Technologies irgs8b60kpbf-1227819.pdf IGBT Modules 600V 9AD2PAK
товар відсутній