IRGS4620DTRRPBF

IRGS4620DTRRPBF Infineon Technologies


8781734619967619irgs4620dpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(2+Tab) D2PAK T/R
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Технічний опис IRGS4620DTRRPBF Infineon Technologies

Description: IGBT 600V 32A 140W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 31ns/83ns, Switching Energy: 75µJ (on), 225µJ (off), Test Condition: 400V, 12A, 22Ohm, 15V, Gate Charge: 25 nC, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 36 A, Power - Max: 140 W.

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IRGS4620DTRRPBF IRGS4620DTRRPBF Виробник : Infineon Technologies IRGx4620D%28-E%29PbF.pdf Description: IGBT 600V 32A 140W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 140 W
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IRGS4620DTRRPBF IRGS4620DTRRPBF Виробник : Infineon / IR irgs4620dpbf-1227788.pdf IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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