IRGR4607DTRRPBF

IRGR4607DTRRPBF Infineon Technologies


3991irgs4607dpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 11A 58000mW 3-Pin(2+Tab) DPAK T/R
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Технічний опис IRGR4607DTRRPBF Infineon Technologies

Description: IGBT 600V 11A 58W DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A, Supplier Device Package: D-Pak, Td (on/off) @ 25°C: 27ns/120ns, Switching Energy: 140µJ (on), 62µJ (off), Test Condition: 400V, 4A, 100Ohm, 15V, Gate Charge: 9 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 58 W.

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IRGR4607DTRRPBF IRGR4607DTRRPBF Виробник : Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D-Pak
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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