IRGP4790-EPBF

IRGP4790-EPBF Infineon Technologies


194irgp4790pbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AD Tube
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Технічний опис IRGP4790-EPBF Infineon Technologies

Description: IGBT 650V TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 50ns/200ns, Switching Energy: 2.5mJ (on), 2.2mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 455 W.

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IRGP4790-EPBF IRGP4790-EPBF Виробник : Infineon Technologies IRGP4790%28-E%29PbF.pdf Description: IGBT 650V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.5mJ (on), 2.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
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IRGP4790-EPBF IRGP4790-EPBF Виробник : Infineon / IR irgp4790pbf-1994926.pdf IGBT Transistors IGBT DISCRETES
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