IRGB4640DPBF

IRGB4640DPBF Infineon Technologies


infineon-irgp4640d-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 65A 250000mW 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис IRGB4640DPBF Infineon Technologies

Description: DIODE 600V 40A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 89 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A, Supplier Device Package: TO-220AC, Td (on/off) @ 25°C: 41ns/104ns, Switching Energy: 115µJ (on), 600µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 75 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 72 A, Power - Max: 250 W.

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IRGB4640DPBF IRGB4640DPBF Виробник : Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: DIODE 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRGB4640DPBF IRGB4640DPBF Виробник : Infineon / IR Infineon-IRGP4640D-DataSheet-v01_00-EN-1227929.pdf IGBT Transistors IGBT DISCRETES
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