Технічний опис IRG7PH42UD1PBF Infineon Technologies
Description: IGBT 1200V 85A 313W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247AC, IGBT Type: Trench, Td (on/off) @ 25°C: -/270ns, Switching Energy: 1.21mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 180 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 313 W.
Інші пропозиції IRG7PH42UD1PBF
Фото | Назва | Виробник | Інформація |
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IRG7PH42UD1PBF | Виробник : Infineon Technologies |
Description: IGBT 1200V 85A 313W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247AC IGBT Type: Trench Td (on/off) @ 25°C: -/270ns Switching Energy: 1.21mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 180 nC Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 313 W |
товар відсутній |
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IRG7PH42UD1PBF | Виробник : Infineon / IR | IGBT Transistors 1200V 85A |
товар відсутній |