Технічний опис IRG7PH35UD1-EP Infineon Technologies
Description: IGBT 1200V 50A 179W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: Trench, Td (on/off) @ 25°C: -/160ns, Switching Energy: 620µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 130 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 179 W.
Інші пропозиції IRG7PH35UD1-EP
Фото | Назва | Виробник | Інформація |
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IRG7PH35UD1-EP | Виробник : Infineon Technologies |
Description: IGBT 1200V 50A 179W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: -/160ns Switching Energy: 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 179 W |
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IRG7PH35UD1-EP | Виробник : Infineon / IR | IGBT Transistors IGBT DISCRETES |
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