IRG7PG42UDPBF

IRG7PG42UDPBF Infineon Technologies


irg7pg42udpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1000V 85A 320000mW Tube
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Технічний опис IRG7PG42UDPBF Infineon Technologies

Description: IGBT 1000V 85A 320W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 153 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247AC, IGBT Type: Trench, Td (on/off) @ 25°C: 25ns/229ns, Switching Energy: 2.11mJ (on), 1.18mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 157 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 320 W.

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IRG7PG42UDPBF IRG7PG42UDPBF Виробник : Infineon Technologies irg7pg42udpbf.pdf Description: IGBT 1000V 85A 320W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 153 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/229ns
Switching Energy: 2.11mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 157 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 320 W
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