IRG4RC10SDTRRP

IRG4RC10SDTRRP Infineon Technologies


irg4rc10sd.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK T/R
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Технічний опис IRG4RC10SDTRRP Infineon Technologies

Description: IGBT 600V 14A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Supplier Device Package: TO-252AA (DPAK), Td (on/off) @ 25°C: 76ns/815ns, Switching Energy: 310µJ (on), 3.28mJ (off), Test Condition: 480V, 8A, 100Ohm, 15V, Gate Charge: 15 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 38 W.

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IRG4RC10SDTRRP IRG4RC10SDTRRP Виробник : Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 14A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRG4RC10SDTRRP IRG4RC10SDTRRP Виробник : Infineon Technologies irg4rc10sdpbf-1227951.pdf IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT
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