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IRFS750A Fairchild Semiconductor
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Description: MOSFET N-CH 400V 8.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
137+ | 154.45 грн |
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Технічний опис IRFS750A Fairchild Semiconductor
Description: MOSFET N-CH 400V 8.4A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V, Power Dissipation (Max): 49W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V.
Інші пропозиції IRFS750A за ціною від 185.29 грн до 185.29 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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IRFS750A | Виробник : ONSEMI |
![]() ![]() tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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IRFS750A | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V |
товар відсутній |