IRFS4010-7PPBF

IRFS4010-7PPBF Infineon Technologies


infineon-irfs4010-7p-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube
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Технічний опис IRFS4010-7PPBF Infineon Technologies

Description: MOSFET N-CH 100V 190A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V.

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IRFS4010-7PPBF IRFS4010-7PPBF Виробник : Infineon Technologies irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185 Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
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IRFS4010-7PPBF IRFS4010-7PPBF Виробник : Infineon Technologies Infineon_IRFS4010_7P_DataSheet_v01_01_EN-1732919.pdf MOSFET MOSFT 100V 190A 4.0mOhm 150nC
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