IRFR9110 Harris Corporation
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Description: MOSFET P-CH 100V 3.1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
554+ | 45.47 грн |
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Технічний опис IRFR9110 Harris Corporation
Description: MOSFET P-CH 100V 3.1A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Інші пропозиції IRFR9110
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFR9110 | Виробник : Vishay |
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товар відсутній |
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IRFR9110 | Виробник : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
товар відсутній |
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![]() |
IRFR9110 | Виробник : Vishay / Siliconix |
![]() ![]() |
товар відсутній |