Технічний опис IRFR12N25DTRPBF IR
Description: MOSFET N-CH 250V 14A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V.
Інші пропозиції IRFR12N25DTRPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IRFR12N25DTRPBF | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IRFR12N25DTRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
товар відсутній |
|
![]() |
IRFR12N25DTRPBF | Виробник : Infineon / IR |
![]() |
товар відсутній |