IRFPS30N60KPBF Vishay Siliconix
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Description: MOSFET N-CH 600V 30A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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Технічний опис IRFPS30N60KPBF Vishay Siliconix
Description: MOSFET N-CH 600V 30A SUPER247, Packaging: Tube, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SUPER-247™ (TO-274AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V.
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IRFPS30N60KPBF | Виробник : Vishay / Siliconix |
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