IRFI9530N Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET P-CH 100V 7.7A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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Технічний опис IRFI9530N Infineon Technologies
Description: MOSFET P-CH 100V 7.7A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 4.6A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRFI9530N | Виробник : Infineon Technologies |
Infineon |
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