IRFHS9301TR2PBF

IRFHS9301TR2PBF Infineon Technologies


169irfhs9301pbf.pdf Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
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Технічний опис IRFHS9301TR2PBF Infineon Technologies

Description: MOSFET P-CH 30V 6A PQFN, Packaging: Cut Tape (CT), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: 6-PQFN (2x2), Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V.

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IRFHS9301TR2PBF IRFHS9301TR2PBF Виробник : Infineon Technologies irfhs9301pbf.pdf?fileId=5546d462533600a401535623a01c1f61 Description: MOSFET P-CH 30V 6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
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