Технічний опис IRFHM831TR2PBF Infineon Technologies
Description: MOSFET N-CH 30V 14A PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (3x3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Інші пропозиції IRFHM831TR2PBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRFHM831TR2PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 14A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (3x3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товар відсутній |