IRFH7911TR2PBF

IRFH7911TR2PBF Infineon Technologies


2765irfh7911pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
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Технічний опис IRFH7911TR2PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 13A/28A PQFN, Packaging: Cut Tape (CT), Package / Case: 18-PowerVQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, 3.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 28A, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete.

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IRFH7911TR2PBF IRFH7911TR2PBF Виробник : Infineon Technologies irfh7911pbf.pdf?fileId=5546d462533600a40153561f3e731efa Description: MOSFET 2N-CH 30V 13A/28A PQFN
Packaging: Cut Tape (CT)
Package / Case: 18-PowerVQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W, 3.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
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