IRFH7882TRPBF

IRFH7882TRPBF Infineon Technologies


irfh7882pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 80V 26A T/R
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Технічний опис IRFH7882TRPBF Infineon Technologies

Description: MOSFET N-CH 80V 26A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VQFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 195W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3186 pF @ 40 V.

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IRFH7882TRPBF IRFH7882TRPBF Виробник : Infineon Technologies IRFH7882PbF.pdf Description: MOSFET N-CH 80V 26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3186 pF @ 40 V
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