IRFH5303TR2PBF

IRFH5303TR2PBF Infineon Technologies


35760131941009008irfh5303pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin QFN EP T/R
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Технічний опис IRFH5303TR2PBF Infineon Technologies

Description: MOSFET N-CH 30V 23A/82A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 15 V.

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IRFH5303TR2PBF IRFH5303TR2PBF Виробник : Infineon Technologies irfh5303pbf.pdf?fileId=5546d462533600a40153561b604a1ec5 Description: MOSFET N-CH 30V 23A/82A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 15 V
товар відсутній
IRFH5303TR2PBF IRFH5303TR2PBF Виробник : Infineon Technologies irfh5303pbf.pdf?fileId=5546d462533600a40153561b604a1ec5 Description: MOSFET N-CH 30V 23A/82A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 15 V
товар відсутній