IRFH5302TR2PBF

IRFH5302TR2PBF Infineon Technologies


infineon-irfh5302-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R
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Технічний опис IRFH5302TR2PBF Infineon Technologies

Description: MOSFET N-CH 30V 32A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V.

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IRFH5302TR2PBF IRFH5302TR2PBF Виробник : Infineon Technologies irfh5302pbf.pdf?fileId=5546d462533600a40153561b58dc1ec3 Description: MOSFET N-CH 30V 32A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
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