IRFH5210TR2PBF

IRFH5210TR2PBF Infineon Technologies


35326848353512608irfh5210pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
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Технічний опис IRFH5210TR2PBF Infineon Technologies

Description: MOSFET N-CH 100V 10A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V, Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V.

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IRFH5210TR2PBF IRFH5210TR2PBF Виробник : Infineon Technologies irfh5210pbf.pdf?fileId=5546d462533600a40153561b0c461eb0 Description: MOSFET N-CH 100V 10A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
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