Технічний опис IRFH5204TRPBF Infineon Technologies
Description: MOSFET N-CH 40V 22A/100A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V.
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IRFH5204TRPBF | Виробник : Infineon Technologies |
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товар відсутній |
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IRFH5204TRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V |
товар відсутній |