IRFB4233PBF

IRFB4233PBF Infineon Technologies


irfb4233pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 230V 56A 3-Pin(3+Tab) TO-220AB
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Технічний опис IRFB4233PBF Infineon Technologies

Description: MOSFET N-CH 230V 56A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 230 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V.

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IRFB4233PBF IRFB4233PBF Виробник : Infineon Technologies IRFB4233PBF.pdf Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IRFB4233PBF IRFB4233PBF Виробник : Infineon Technologies irfb4233pbf-1169491.pdf MOSFET PDP SWITCH 230V 1 N-CH HEXFET
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