IRF9388PBF

IRF9388PBF Infineon Technologies


infineon-irf9388-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 12A 8-Pin SOIC Tube
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Технічний опис IRF9388PBF Infineon Technologies

Description: MOSFET P-CH 30V 12A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.

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IRF9388PBF IRF9388PBF Виробник : Infineon Technologies irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Description: MOSFET P-CH 30V 12A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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IRF9388PBF IRF9388PBF Виробник : Infineon Technologies Infineon_IRF9388_DataSheet_v02_01_EN-1228241.pdf MOSFET 1 P-CH -30V HEXFET 11.9mOhms 18nC
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