IRF7910PBF Infineon / IR

Description: MOSFET 2N-CH 12V 10A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO.