Технічний опис IRF7759L2TR1PBF Infineon
Description: MOSFET N-CH 75V 26A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V, Power Dissipation (Max): 3.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V.
Інші пропозиції IRF7759L2TR1PBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRF7759L2TR1PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R |
товар відсутній |
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IRF7759L2TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 26A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V |
товар відсутній |