IRF7739L2TR1PBF

IRF7739L2TR1PBF Infineon Technologies


3230irf7739l2pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 40V 46A 15-Pin Direct-FET L8 T/R
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Технічний опис IRF7739L2TR1PBF Infineon Technologies

Description: MOSFET N-CH 40V 46A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V.

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IRF7739L2TR1PBF IRF7739L2TR1PBF Виробник : Infineon Technologies IRF7739L2PBF.pdf Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
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IRF7739L2TR1PBF IRF7739L2TR1PBF Виробник : Infineon / IR international rectifier_irf7739l2pbf-1169059.pdf MOSFET 40V 270A 1.0mOhm 220nC Qg
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