IRF7534D1PBF

IRF7534D1PBF Infineon Technologies


irf7534d1pbf.pdf Виробник: Infineon Technologies
Trans MOSFET P-CH 20V 4.3A 8-Pin Micro
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Технічний опис IRF7534D1PBF Infineon Technologies

Description: MOSFET P-CH 20V 4.3A MICRO8, Packaging: Tube, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V.

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IRF7534D1PBF IRF7534D1PBF Виробник : Infineon Technologies IRF7534D1PbF.pdf Description: MOSFET P-CH 20V 4.3A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
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