IRF7220GTRPBF

IRF7220GTRPBF Infineon Technologies


125378721519579.pdf Виробник: Infineon Technologies
Trans MOSFET P-CH Si 14V 11A 8-Pin SOIC T/R
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Технічний опис IRF7220GTRPBF Infineon Technologies

Description: MOSFET P-CH 14V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 14 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8075 pF @ 10 V.

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IRF7220GTRPBF IRF7220GTRPBF Виробник : Infineon Technologies irf7220gpbf.pdf Description: MOSFET P-CH 14V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 14 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8075 pF @ 10 V
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IRF7220GTRPBF IRF7220GTRPBF Виробник : Infineon / IR international rectifier_irf7220gpbf-1169054.pdf MOSFET MOSFT PCh -12V -11A 12mOhm 84nC
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