IRF7171MTRPBF

IRF7171MTRPBF Infineon Technologies


35335464581945500irf7171mpbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 15A 7-Pin Direct-FET MN T/R
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Технічний опис IRF7171MTRPBF Infineon Technologies

Description: MOSFET N-CH 100V 15A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 150µA, Supplier Device Package: DIRECTFET™ MN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V.

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IRF7171MTRPBF IRF7171MTRPBF Виробник : Infineon Technologies IRF7171MTRPBF.pdf Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
товар відсутній
IRF7171MTRPBF IRF7171MTRPBF Виробник : Infineon Technologies IRF7171MTRPBF.pdf Description: MOSFET N-CH 100V 15A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 56A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V
товар відсутній