Технічний опис IRF6710S2TRPBF Infineon / IR
Description: MOSFET N-CH 25V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric S1, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V, Power Dissipation (Max): 1.8W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: DirectFET™ Isometric S1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V.
Інші пропозиції IRF6710S2TRPBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRF6710S2TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T/R |
товар відсутній |
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IRF6710S2TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 12A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric S1 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V Power Dissipation (Max): 1.8W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: DirectFET™ Isometric S1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V |
товар відсутній |