IRF6706S2TR1PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
на замовлення 838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.83 грн |
| 10+ | 64.66 грн |
| 100+ | 55.96 грн |
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Технічний опис IRF6706S2TR1PBF Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric S1, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V, Power Dissipation (Max): 1.8W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: DirectFET™ Isometric S1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V.
Інші пропозиції IRF6706S2TR1PBF
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IRF6706S2TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 17A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric S1 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V Power Dissipation (Max): 1.8W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: DirectFET™ Isometric S1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V |
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