IRF6645 Infineon Technologies

Description: MOSFET N-CH 100V 5.7A DIRECTFET, Packaging: Tube, Package / Case: DirectFET™ Isometric SJ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V, Power Dissipation (Max): 3W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 50µA, Supplier Device Package: DIRECTFET™ SJ, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V.