IRF6150 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2P-CH 20V 7.9A FLIP-FET
Packaging: Cut Tape (CT)
Package / Case: 16-WFBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 16-FlipFet™
Part Status: Obsolete
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Технічний опис IRF6150 Infineon Technologies
Description: MOSFET 2P-CH 20V 7.9A FLIP-FET, Packaging: Tape & Reel (TR), Package / Case: 16-WFBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.9A, Rds On (Max) @ Id, Vgs: 36mOhm @ 7.9A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 16-FlipFet™, Part Status: Obsolete.
Інші пропозиції IRF6150
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF6150 | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 20V 7.9A FLIP-FET Packaging: Tape & Reel (TR) Package / Case: 16-WFBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.9A Rds On (Max) @ Id, Vgs: 36mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 16-FlipFet™ Part Status: Obsolete |
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