IRF3709ZPBF

IRF3709ZPBF Infineon Technologies


IRF3709Z%28S%2CL%29PbF.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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Технічний опис IRF3709ZPBF Infineon Technologies

Description: MOSFET N-CH 30V 87A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V.

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IRF3709ZPBF IRF3709ZPBF Виробник : Infineon Technologies Infineon_IRF3709Z_DataSheet_v01_01_EN-1732511.pdf MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
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