IR21364SPBF Infineon Technologies
Виробник: Infineon TechnologiesDriver 600V 0.35A 6-OUT High and Low Side 3-Phase Brdg Non-Inv 28-Pin SOIC W Tube
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Технічний опис IR21364SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC, Packaging: Tube, Package / Case: 28-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 11.5V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 28-SOIC, Rise / Fall Time (Typ): 125ns, 50ns, Channel Type: 3-Phase, Driven Configuration: Half-Bridge, Number of Drivers: 6, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 200mA, 350mA, DigiKey Programmable: Not Verified.
Інші пропозиції IR21364SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IR21364SPBF | Виробник : Infineon Technologies |
Driver 600V 6-OUT High and Low Side 3-Phase Brdg Non-Inv 28-Pin SOIC W Tube |
товар відсутній |
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IR21364SPBF | Виробник : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 11.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
товар відсутній |