IPZ60R099P6FKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 475.19 грн |
10+ | 392.5 грн |
Відгуки про товар
Написати відгук
Технічний опис IPZ60R099P6FKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.21mA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V.
Інші пропозиції IPZ60R099P6FKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IPZ60R099P6FKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 600V 37.9A 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
||
IPZ60R099P6FKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 600V 37.9A 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
||
IPZ60R099P6FKSA1 | Виробник : Infineon Technologies | MOSFET HIGH POWER_PRICE/PERFORM |
товар відсутній |