IPZ40N04S53R9ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(20V 40V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tj)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 21µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1737 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.67 грн |
| 10+ | 54.3 грн |
| 100+ | 42.28 грн |
| 500+ | 33.63 грн |
| 1000+ | 27.39 грн |
| 2000+ | 25.79 грн |
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Технічний опис IPZ40N04S53R9ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tj), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 21µA, Supplier Device Package: PG-TSDSON-8-33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1737 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPZ40N04S53R9ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPZ40N04S53R9ATMA1 | Виробник : Infineon Technologies |
Automotive Power Mosfet |
товар відсутній |
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| IPZ40N04S53R9ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tj) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 21µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1737 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| IPZ40N04S53R9ATMA1 | Виробник : Infineon Technologies |
MOSFETs N |
товар відсутній |