IPTG025N10NM5ATMA1 Infineon Technologies


infineon-iptg025n10nm5-datasheet-v02_00-en.pdf Виробник: Infineon Technologies
SP005575193
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Технічний опис IPTG025N10NM5ATMA1 Infineon Technologies

Description: TRENCH >=100V PG-HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 158µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V.

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IPTG025N10NM5ATMA1 Виробник : Infineon Technologies Infineon-IPTG025N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179137ca9b12ee3 Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
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IPTG025N10NM5ATMA1 IPTG025N10NM5ATMA1 Виробник : Infineon Technologies Infineon_IPTG025N10NM5_DataSheet_v02_00_EN-3362803.pdf MOSFET TRENCH >=100V
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