на замовлення 1995 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351.24 грн |
| 10+ | 291.73 грн |
| 25+ | 233.47 грн |
| 100+ | 205.59 грн |
| 250+ | 202.8 грн |
| 500+ | 181.89 грн |
| 1000+ | 156.11 грн |
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Технічний опис IPT60R125G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 20A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V.
Інші пропозиції IPT60R125G7XTMA1
| Фото | Назва | Виробник | Інформація |
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IPT60R125G7XTMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 20A 9-Pin(8+Tab) HSOF T/R |
товар відсутній |
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IPT60R125G7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 20A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
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IPT60R125G7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 20A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
товар відсутній |