IPT014N08NM5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
на замовлення 2209 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 437.22 грн |
10+ | 353.72 грн |
100+ | 286.12 грн |
500+ | 238.68 грн |
1000+ | 204.37 грн |
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Технічний опис IPT014N08NM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V.
Інші пропозиції IPT014N08NM5ATMA1 за ціною від 210.91 грн до 475.67 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPT014N08NM5ATMA1 | Виробник : Infineon Technologies | MOSFETs TRENCH 40<-<100V |
на замовлення 5967 шт: термін постачання 21-30 дні (днів) |
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IPT014N08NM5ATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 80V 37A 9-Pin(8+Tab) HSOF T/R |
товар відсутній |
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IPT014N08NM5ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 37A/331A HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V |
товар відсутній |